Electrical activity of misfit dislocations in GaAs-based heterostructures
Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level transient spectroscopy (DLTS). DLTS measurements, carried out with p-n junctio...
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| Date: | 2003 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117944 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrical activity of misfit dislocations in GaAs-based heterostructures / T. Wosinski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 58-61. — Бібліогр.: 12 назв. — англ. |