Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped by neutron irradiation and doped at growth were st...

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Datum:2003
Hauptverfasser: Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/117987
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon / Yu.P. Dotsenko, V.M. Ermakov, A.E Gorin, V.I. Khivrych, V.V. Kolomoets, V.F. Machulin, L.I. Panasjuk, I.V. Prokopenko, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 111-114. — Бібліогр.: 9 назв. — англ.

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