Ultrasound influence on exciton emission of GaP light diodes
Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occurred in structures treated by prolong treatment at...
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| Date: | 2003 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118000 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Ultrasound influence on exciton emission of GaP light diodes / O.M. Gontaruk, V.I. Khivrych, M.B. Pinkovska, V.P. Tartachnyk, Ya.M. Olikh, R.M. Vernydub, V.Ya. Opilat // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 223-226. — Бібліогр.: 11 назв. — англ. |