Dielectric response of disordered ferroelectrics with embedded charged clusters
The model of static charged clusters, which adequately describes the dielectric hysteresis and permittivity of disordered ferroelectrics with non-isovalent impurities, has been proposed. The main result of paper is modified Landau-Ginzburg-Devonshire equation can be applied to the bulk ferroelectric...
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| Datum: | 2003 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118003 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dielectric response of disordered ferroelectrics with embedded charged clusters / A.N. Morozovska, E.A. Eliseev, V.V. Obukhovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 238-248. — Бібліогр.: 21 назв. — англ. |