One-dimensional warm electron transport in GaN quantum well wires at low temperatures

One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. Electron scattering via deformation potential acoustic, piezoelectric, and ion...

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Datum:2003
1. Verfasser: Sarkar, S.K.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118009
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:One-dimensional warm electron transport in GaN quantum well wires at low temperatures / S.K. Sarkar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 264-268. — Бібліогр.: 26 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine