Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
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| Datum: | 2003 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118011 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ. |