Configuration interaction in delta-doped heterostructures

We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...

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Bibliographic Details
Date:2013
Main Authors: Rozhansky, I.V., Averkiev, N.S., Lähderanta, E.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118094
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine