Configuration interaction in delta-doped heterostructures
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...
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Date: | 2013 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Published: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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Series: | Физика низких температур |
Subjects: | |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118094 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |