Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon...
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| Date: | 2003 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118103 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure / K.C. Aw, K. Ibrahim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 524-527. — Бібліогр.: 12 назв. — англ. |