Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of s...

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Bibliographic Details
Date:2007
Main Authors: Moscal, D.S., Fedorenko, L.L., Yusupov, M.M., Golodenko, M.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118129
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine