Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of s...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118129 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |