Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer w...
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| Date: | 2012 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118249 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |