Phase diagrams of Si₁-xGex solid solution: a theoretical approach
In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting elemen...
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Datum: | 2012 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118268 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. |