Phase diagrams of Si₁-xGex solid solution: a theoretical approach

In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting elemen...

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Datum:2012
Hauptverfasser: Jivani, A.R., Jani, A.R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118268
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ.

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