Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals

Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals

Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects of chromium and manganese impurities on the transmission spectra are discu...

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Datum:2012
Hauptverfasser: Paiuk, A.P., Stronski, A.V., Vuichyk, N.V., Gubanova, A.A., Krys’kov, Ts.A., Oleksenko, P.F.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118287
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals / A.P. Paiuk, A.V. Stronski, N.V. Vuichyk, A.A. Gubanova, Ts.A. Krys’kov, P.F. Oleksenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 152-156. — Бібліогр.: 22 назв. — англ.

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