Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction
Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the layer-substrate interface were analyzed. It was determined that for [310] oriente...
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118306 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction/ A. B. Smirnov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 170-175. — Бібліогр.: 22 назв. — англ. |