Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide
The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially dependent on surface topology of oxide. The obtained results indicate that In...
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Date: | 2012 |
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Main Authors: | , |
Format: | Article |
Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118313 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. |