Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide

The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially dependent on surface topology of oxide. The obtained results indicate that In...

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Bibliographic Details
Date:2012
Main Authors: Katerynchuk, V.M., Kudrynskyi, Z.R.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118313
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine