Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide
The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially dependent on surface topology of oxide. The obtained results indicate that In...
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| Date: | 2012 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118313 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide / V.M. Katerynchuk, Z.R. Kudrynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 214-217. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal
layer has a nanostructured surface, have been investigated. The photoresponse spectra of
these heterostructures have been found as essentially dependent on surface topology of
oxide. The obtained results indicate that In₂O₃ oxide is not only an active component of
the structure but also acts as a diffraction cell element. Oxide surface topology was
investigated using the atomic-force microscope technique. Under different conditions of
InSe oxidation, the sample surfaces contained nanoformations preferably in the form of
nano-islands. Their location acquired both disordered and ordered characters. A
dimensional optical effect in the oxide layer was found to be due to the anisotropic light
absorption in InSe. The higher deviation of incident light from its normal direction due to
a nanostructured surface is, the higher variation in generation of carriers in this
semiconductor is. These changes consist in the energy broadening of the heterostructure
photoresponse spectrum as well as in peculiarities of the excitonic line. The higher
density and ordering of the nanoneedles on the oxide surface is, the higher long-wave
shift and more intense excitonic peak in spectrum takes place. |
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