Nanostructures in lightly doped silicon carbide crystals with polytypic defects
In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects are reported. Undoped SiC single crystals with the impurity concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ cm⁻³, and ND – NA ~ (1…5)*10¹⁷ cm⁻³, ND = 10¹⁸ cm⁻³ were investigated. The...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118364 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Nanostructures in lightly doped silicon carbide crystals with polytypic defects / S.I. Vlaskina, G.N. Mishinova, L.V. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 155-159. — Бібліогр.: 23 назв. — англ. |