Relaxation process features of photoconductivity in p-i-n structures
We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of these structures. Our experimental data are indicative of abnormal relaxation...
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| Datum: | 2010 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118398 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Relaxation process features of photoconductivity in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ. |