Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL b...
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| Date: | 2014 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118413 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ. |