Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

In this paper, we have considered the four-contact method for measurements of the specific contact resistivity of the ohmic contacts (ρc). The presented method for measuring ρc has been compared with several other methods. Limits of applying this method have been shown.

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Bibliographische Detailangaben
Datum:2014
1. Verfasser: Sheremet, V.N.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/118426
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 394-397. — Бібліогр.: 8 назв. — англ.

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