Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths...
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| Date: | 2014 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118492 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. |