Double- and triple-crystal X-ray diffractometry of microdefects in silicon
The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD and TCD) from single crystals with defects in crystal bulk and with strained...
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| Date: | 2010 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118577 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Double- and triple-crystal X-ray diffractometry of microdefects in silicon / V.B. Molodkin, S.I. Olikhovskii, Ye.M. Kyslovskyy, E.G. Len, O.V. Reshetnyk, T.P. Vladimirova, V.V. Lizunov, S.V. Lizunova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 353-356. — Бібліогр.: 20 назв. — англ. |