Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by t...
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| Datum: | 2010 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |