Properties of junction diodes under conditions of bisotropic strains
In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as lon...
Збережено в:
| Дата: | 2009 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118608 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In consideration of influence of technological strains on characteristics of
junction diodes located on surface of silicon wafers, biaxial character of such strains has
taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
surface the diodes are located as well as longitudinal (in plane of the wafer) and
transversal (perpendicular to it) diode current flow have been considered. It is shown that
at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
to increase by several orders of magnitude irrespective of the strain sign. |
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