Properties of junction diodes under conditions of bisotropic strains
In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as lon...
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| Datum: | 2009 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118608 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
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irk-123456789-1186082017-05-31T03:09:30Z Properties of junction diodes under conditions of bisotropic strains Borblik, V.L. In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as longitudinal (in plane of the wafer) and transversal (perpendicular to it) diode current flow have been considered. It is shown that at small strains, the diodes located on the surface of (111)-Si are less subjected (as a whole) to their influence. Furthermore, the change in the intrinsic carrier concentration has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown to increase by several orders of magnitude irrespective of the strain sign. 2009 Article Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 77.65.Ly, 78.66.-w, 79.60.Jv, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118608 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In consideration of influence of technological strains on characteristics of
junction diodes located on surface of silicon wafers, biaxial character of such strains has
taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose
surface the diodes are located as well as longitudinal (in plane of the wafer) and
transversal (perpendicular to it) diode current flow have been considered. It is shown that
at small strains, the diodes located on the surface of (111)-Si are less subjected (as a
whole) to their influence. Furthermore, the change in the intrinsic carrier concentration
has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown
to increase by several orders of magnitude irrespective of the strain sign. |
| format |
Article |
| author |
Borblik, V.L. |
| spellingShingle |
Borblik, V.L. Properties of junction diodes under conditions of bisotropic strains Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Borblik, V.L. |
| author_sort |
Borblik, V.L. |
| title |
Properties of junction diodes under conditions of bisotropic strains |
| title_short |
Properties of junction diodes under conditions of bisotropic strains |
| title_full |
Properties of junction diodes under conditions of bisotropic strains |
| title_fullStr |
Properties of junction diodes under conditions of bisotropic strains |
| title_full_unstemmed |
Properties of junction diodes under conditions of bisotropic strains |
| title_sort |
properties of junction diodes under conditions of bisotropic strains |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118608 |
| citation_txt |
Properties of junction diodes under conditions
of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT borblikvl propertiesofjunctiondiodesunderconditionsofbisotropicstrains |
| first_indexed |
2025-07-08T14:18:49Z |
| last_indexed |
2025-07-08T14:18:49Z |
| _version_ |
1837088722862997504 |