Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effe...
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| Datum: | 2009 |
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| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118612 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. |