Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy alloys, and Tgr and KG were calculated using them. T...
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| Datum: | 2009 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118689 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ. |