Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as com...
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118731 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |