Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect
Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently changes both effects. Calculated here values substantially differ from conseq...
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| Date: | 2009 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118834 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 349-356. — Бібліогр.: 9 назв. — англ. |