Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation
The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.
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Datum: | 2009 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118844 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 403-405. — Бібліогр.: 4 назв. — англ. |