Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (ann...
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| Datum: | 2009 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118846 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
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irk-123456789-1188462017-06-01T03:06:05Z Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (annealing temperature T and partial pressure of cadmium PCd vapor). The dominant types of defects that determine the basic properties of the material n- and p-type conduction were determined. 2009 Article Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.72.Bb, Ji, -y http://dspace.nbuv.gov.ua/handle/123456789/118846 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The defective structure of specifically undoped cadmium telluride crystals was
researched using the theory of thermodynamic potentials. The calculated concentration of
point defects and free charge carriers in the CdTe crystals, depending on technological
factors of two-temperature annealing (annealing temperature T and partial pressure of
cadmium PCd vapor). The dominant types of defects that determine the basic properties
of the material n- and p-type conduction were determined. |
| format |
Article |
| author |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| spellingShingle |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Prokopiv, V.V. Fochuk, P.M. Gorichok, I.V. Vergak, E.V. |
| author_sort |
Prokopiv, V.V. |
| title |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_short |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_fullStr |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_full_unstemmed |
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| title_sort |
thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118846 |
| citation_txt |
Thermodynamic analysis of processes creating
the defects in cadmium telluride crystals under conditions
of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT prokopivvv thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT fochukpm thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT gorichokiv thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing AT vergakev thermodynamicanalysisofprocessescreatingthedefectsincadmiumtelluridecrystalsunderconditionsofhightemperatureannealing |
| first_indexed |
2025-07-08T14:46:24Z |
| last_indexed |
2025-07-08T14:46:24Z |
| _version_ |
1837090458084311040 |