Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (ann...
Gespeichert in:
| Datum: | 2009 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118846 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing / V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 412-416. — Бібліогр.: 27 назв. — англ. |