Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free char...
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| Datum: | 2008 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118850 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |