Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic i...
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| Datum: | 2009 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118871 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |