Theoretical consideration of charge transport through the nanoindentor/GaAs junction
The process of indentation of GaAs single crystal by the conductive nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip and small area of GaAs platelet has been considered. The evolution of local mechanical stress during the nanoindentation cycle and an appropri...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118903 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The process of indentation of GaAs single crystal by the conductive
nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
and small area of GaAs platelet has been considered. The evolution of local mechanical
stress during the nanoindentation cycle and an appropriate transformation of electric
potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone
variation of the mechanical stress and electric potential difference during the
indentation cycle has been disclosed. The current spike experimentally registered in the
moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to
the non-monotone variation of potential difference during the indentation cycle. |
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