Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studie...
Saved in:
| Date: | 2008 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119049 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ. |