Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Ef...

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Datum:2008
Hauptverfasser: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/119072
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ.

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