Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells
A study for the effects of size quantization and strain effects on the valence band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende GaN quantum wells is presented. In the framework of the effective mass theory, the Schrödinger equation is solved for the valence...
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| Datum: | 2008 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119073 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells / L.O. Lokot // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 364-369. — Бібліогр.: 36 назв. — англ. |