Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. It was shown that the large leakage current at a negative gate voltage causes t...

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Bibliographic Details
Date:2008
Main Authors: Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119074
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric / A. N. Nazarov, Y. V. Gomeniuk, Y. Y. Gomeniuk, V. S. Lysenko, H. D. B. Gottlob, M. Schmidt, M. C. Lemme, M. Czernohorsky, H. J. Ostenc // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 324-328. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine