Interface electronic properties of eterojunctions based on nanocrystalline silicon
For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples fabricated by laser ablation of c-Si target with deposition of nc-Si films onto s...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119107 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Interface electronic properties of eterojunctions based on nanocrystalline silicon / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 11-14. — Бібліогр.: 14 назв. — англ. |