Accurate numerical modelling the GaAs MESFET current-voltage characteristics
In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In thi...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119205 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ. |