Structural investigations of annealed ZnS:Cu, Ga film phosphors
X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various types (glass, BaTiO₃, silicon). New non-vacuum method of annealing was applied f...
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| Datum: | 2001 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119243 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structural investigations of annealed ZnS:Cu, Ga film phosphors / O.S. Lytvyn, V.S. Khomchenko, T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, I.V. Prokopenko, V.Ye. Rodionov, Yu.A. Tzyrkunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 19-23. — Бібліогр.: 13 назв. — англ. |