Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse cu...
Gespeichert in:
| Datum: | 2001 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119312 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ. |