Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration

High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be ex...

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Bibliographic Details
Date:2001
Main Author: Bogoboyashchyy, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119320
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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