Hopping conductivity in GaSe monocrystals at low temperatures
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31...
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| Datum: | 2001 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119326 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. |