The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating
In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order,...
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| Datum: | 2001 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119334 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating / O.A. Agueev, A.M. Svetlichny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 307-312. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order, and the increase in heating temperature from 800 to 1100 °C increases the defect formation criterion by two orders. The optimum size and shape alteration range as well as the heating temperature for defect-free thermal treatment of structures are determined. |
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