Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating

von Agueev, O.A., Svetlichnyi, A.M.
Veröffentlicht 2000

The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

von Agueev, O.A., Svetlichny, A.M.
Veröffentlicht 2001

Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

von Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.
Veröffentlicht 2000

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

von Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Veröffentlicht 2002

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

von Avdeev, S.P., Agueev, O.A., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Sechenov, D.A., Svetlichny, A.M., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht 2004

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

von Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Veröffentlicht 2004