Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates

A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the...

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Bibliographic Details
Date:2002
Main Author: Tkach, V.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/119563
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine