Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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irk-123456789-1195632017-06-08T03:03:10Z Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates Tkach, V.N. A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate. 2002 Article Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 61.10.N, 61.66, 68.35.B http://dspace.nbuv.gov.ua/handle/123456789/119563 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate. |
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Tkach, V.N. |
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Tkach, V.N. Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates Semiconductor Physics Quantum Electronics & Optoelectronics |
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Tkach, V.N. |
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Tkach, V.N. |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
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divergent-beam x-ray structural studies of a disturbed surface layer in silicon plates |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2002 |
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http://dspace.nbuv.gov.ua/handle/123456789/119563 |
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Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT tkachvn divergentbeamxraystructuralstudiesofadisturbedsurfacelayerinsiliconplates |
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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 36-38.
© 2002, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine36
PACS: 61.10.N, 61.66, 68.35.B
Divergent-beam X-ray structural studies
of a disturbed surface layer in silicon plates
V.N. Tkach
V.N. Bakul Institute for Superhard Materials, NAS of Ukraine, 04074 Kyiv, Ukraine
Phone: +380 (44) 432 9932; e-mail: tkach@ism.kiev.ua
Abstract. A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has
been developed on the basis of a BS-340 scanning electron microscope. We have examined the
structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The inten-
sity of X-ray reflection from the lattice planes intersecting a polished surface of a plate
characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits
a tendency to damp deep within the plate.
Keywords: Kossel diffraction, X-ray, structure, silicon.
Paper received 31.10.01; revised manuscript received 16.01.01; accepted for publication 05.03.02.
Kossel�s method (divergent-beam X-ray diffrac-
tion) is used for precision studies of the lattice struc-
ture perfetion of single crystals. A number of publi-
cations on the subject are reviewed in [1]. K.
Lonsdale was the first to apply the Kossel method
to study the perfection of the diamond lattice struc-
ture [2]. Her paper gives not only the values of
interplanar spacings in natural diamonds, but
analyzes the Kossel�s line profile in the kinematic
approximation. Refs [3-5] report the use of Kossel�s
method for measurements of interplanar spacings,
analysis of stressed state, studying the effect of sys-
tem growth on the Kossel�s line intensity profile of
diamonds of various origin as well as for determi-
nation of interplanar spacing anisotropy of dia-
mond single crystals in equivalent crystallographic
directions.
The experimental results showing the possibil-
ity to use Kossel�s method for studying the layer
disturbed due to chemico-mechanical polishing of
silicon plates are discussed in the present paper.
A Kossel chamber for reflected-beam X-ray
studying of the surface structure of single crystals
has been made as an attachment to a BS-340 scan-
ning electron microscope. A schematic diagram of
taking Kossel�s diffraction patterns is given in Fig. 1.
As an anode, to obtain the initial X-ray beam, a
thin (~ 5 to 10 µm) foil of any material can be used.
In this work, we used X-ray characteristic CuKα1,2
rad iat ion f rom a 5-µm thick fo i l , acce ler -
ating voltage (30 kV) of the BS-340 microscope elec-
tron beam and a FT101 highly contrasting film tak-
ing Kossel�s diffraction patterns is given in Fig. 1.
It should be noted that with this geometry, the
thickness of a layer from which diffraction patterns
can be taken is about 30 µm. As opposed to the di-
vergent-beam X-ray photographing with the use of
extinction lines (the case of Laue [1 � 5]) where the
information is gained from the entire crystal, X-ray
diffraction patterns in a reflected light allow one to
examine surface layers of the crystal, which is of
great importance when studying the imperfect struc-
tures of semiconducting plates for microelectronics
products.
Monocrystalline silicon plates for microelectron-
ics after chemico-mechanical polishing parallel to
the (111) plane have been the subjects of our inves-
tigation. Fig. 2 shows a typical Kossel diffraction
pattern from a silicon single crystal in the CuKα1,2
radiation. The symmetry of diffraction reflections
from the {444} and {622} planes about the axis of
the initial X-ray beam indicates that the crystal has
been well oriented during its chemico-mechanical
treatment.
When studying the surface layer, particular atten-
tion should be given to the Kossel lines produced due
to the the scattering of rays by the {442} planes of the
lattice that intersect the polished surface of the plate.
It follows from Fig. 3a (indicated fragment) that due
to radiation scattering by imperfect surface layers of
the crystal, the Kossel lines broaden.
V.N. Tkach : Divergent-beam x-ray studies of the structure of...
37SQO, 5(1), 2002
Fig. 1. Schematic diagram of taking the Kossel diffraction pat-
tern in a reflected X-ray.
Fig. 2. Fragment of the Kossel diffraction pattern from a plate of
polished silicon. CuKα1,2 radiation, the [111] direction.
16
8
0 1 2 3 4 5
x10
3
P
ul
se
s
µk m
Fig. 3. Fragment of the Kossel diffraction pattern from the silicon plate surface in CuKα1,2 radiation (a) and microdensity pattern (b)
from the 442 line when scanned along the indicated direction.
Microdensitometric measurements of the line structure
have shown that the intensity of the X-ray reflection is of a
periodic nature and tends to damp deep within the plate.
Taking into account the dimensions of diffraction
nonuniformity of the line in the (111) plane as well as the
angle between the (442) and the (111) crystallographic
planes, we have calculated the total thickness of the dis-
turbed layer and the thickness of dislocation sublayers that
constitute the former (see Fig. 3b).
Our findings agree well with the data obtained by a de-
structive check of the disturbed layer from the electron scat-
tering [6] (see Figs 4a and b).
It follows from Fig. 4b that the average defect content of
the disturbed layer decreases according to exponential curve
marked �1.5X. Thus, the data obtained by both the method
of scattered electrons and Kossel�s method point to the dis-
location mechanism of wear in machining the material sur-
face.
Fragments of Kossel diffraction patterns from silicon
plates after the chemico-mechanical polishing and subse-
quent treatment with an abrasive powder are given in Figs
5a and b. In Fig. 5b regions (some of them are indicated by
arrows) typical of lines due to non-centrosymmetrical X-
ray reflection by the lattice planes are observed in diffrac-
tion lines. It follows that under the mechanical action of
abrasive grits, around a scratch dislocation distortions of
the lattice (in sizes above 30 µm) appear, in which recording
Kossel�s lines is difficult.
Thus, Kossel�s method allows us to study the thickness
and structure of a disturbed layer of silicon plates used in
production of electronic microcircuits. It can be used as
nondestructive method of controlling the surface quality and
for studying mechanisms of material machinability.
Some papers report the study of the surface of
semiconducting materials using mutual arrangement of
Kossel�s lines in the diffraction patterns. In Ref. [7], the
Kossel�s method was applied to define the difference in
lattice parameters between the initial semiconducting
(a)
(b)
38 SQO, 5(1), 2002
V.N. Tkach : Divergent-beam x-ray studies of the structure of...
crystal and epitaxial coating designed for microelectron-
ics. The authors reported the formation of an imperfect
layer at the crystal-coating interface that affects the coat-
ing structure.
Unfortunately, the number of publications on experi-
mental studies of the surface of semiconducting materi-
als using the intensity profile of Kossel�s lines is limited.
Currently nanotechnologies are being intensively devel-
oped in microelectronics, and analysis of the intensity
profiles of Kossel�s lines can provide an additional infor-
mation for studying the materials for quantum electron-
ics.
8
6
0 0.5 1.0 1.5 2.0 2.5
4
2
10
P
ul
se
s
µk m
x
3
y = 11 0 00 e-1,5x R =1
2
Fig. 4. SEM images of: a cleavage of the silicon plate (magnification 40,000x (a)) and intensity of scattered electrons during the
probe scanning of the cleavage (b).
Fig. 5. Fragments of the Kossel diffraction pattern from the polished silicon plate (a) and from the same plate after machining with an
abrasive powder (b).
(a) (b)
(a) (b)
References
1. N.A. Bert, S. G. Konnikov,V.E. Umansky, Determination of
the value of the difference in elemental cell parameters of
semiconducting heterostructures by X-ray divergent beam//
Fizika i Tekhnika Poluprovodnikov, 14 (10) p.1899-1903, 1980.
2. K. Lonsdale, Divergent-beam X-ray photography of crystals
// Phil. Trans. Royal Soc. of London, 240 (818), pp. 219-250,
1948.
3. A. S. Vishnevsky and V. N. Tkach, Precision measurement
of the diamond lattice constant by Kossel�s method //
Sverkhtverdye Materialy, 4, pp. 22-28, 1982.
4. N. V. Novikov, V. N. Tkach A. and S. Vishnevsky. Elastic
characteristics of synthetic diamond single crystals // DAN
SSSR, 302 (6), pp. 1368-1371.
5. V. N. Tkach, The effect of growth conditions on structural
characteristics of diamond // J. of Superhard Materials, 19
(5), pp. 29-33, 1997.
6. V. A. Ponomarev, V. I. Karban, V. N. Tkach, and A. Yu.
Samoylenko, A method of measuring the thickness of a dis-
turbed layer of a single crystals USSR Author�s Certificate
4,612,881, Publ. 3 October 1989, Byullet. no. 25.
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