Energy spectrum of transition metal impurity in a semiconductor with an ideal surface
Energy spectrum of the transition metal impurity which substitutes a cation in a zink-blende structure semiconductor with an ideal surface is investigated theoretically. Model Hamiltonian of the semiconductor is treated by the semi-empirical tight-binding method, and energy of deep 3d-levels is d...
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| Datum: | 1999 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
1999
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119918 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Energy spectrum of transition metal impurity in a semiconductor with an ideal surface / S.V. Melnychuk, I.M. Yurijchuk // Condensed Matter Physics. — 1999. — Т. 2, № 1(17). — С. 133-142. — Бібліогр.: 15 назв. — англ. |